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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. august 2009 doc id 16118 rev 1 1/12 12 STGF14HF60KD stgp14hf60kd 14 a - 600 v - short-circuit rugged igbt features low on-voltage drop (v ce(sat) ) operating junction temperature up to 175 c low c res / c ies ratio (no cross conduction susceptibility) tight parameter distribution ultrafast soft-recovery antiparallel diode short-circuit rugged applications motor drives high frequency inverters smps and pfc in both hard switch and resonant topologies description this igbt utilizes the advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram 1 2 3 1 2 3 to-220 to-220fp table 1. device summary order codes marking package packaging STGF14HF60KD gf14hf60kd to-220fp tube stgp14hf60kd gp14hf60kd to-220 tube www.st.com
contents STGF14HF60KD, stgp14hf60kd 2/12 doc id 16118 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STGF14HF60KD, stgp14hf60kd electrical ratings doc id 16118 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-220fp v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at t c = 25 c 25 11 a i c (1) collector current (continuous) at t c = 100 c 14 7 a i cl (2) 2. vclamp = 80% of v ces , t j =175 c, r g =10 ? , v ge =15 v turn-off latching current 50 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 50 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 20 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 55 a v iso isolations withstand voltage (rms) from all three leads to external hea sink ( t=1 s; t c = 25 c) -- 2500 v p tot total dissipation at t c = 25 c 95 33 w t scw short-circuit withstand time, v ce = 0.5v (br)ces , t c = 125 c, r g = 10 ?, v ge = 12 v 5s t j operating junction temperature ? 40 to 175 c table 3. thermal data symbol parameter value unit to-220 to-220fp r thj-case thermal resistance junction-case igbt 1.58 4.55 c/w r thj-case thermal resistance junction-case diode 2.2 5.6 c/w r thj-amb thermal resistance junction-ambient 62.5 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- =
electrical characteristics STGF14HF60KD, stgp14hf60kd 4/12 doc id 16118 rev 1 2 electrical characteristics (t j = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 7 a v ge = 15 v, i c = 7 a, t j = 150 c 2.1 1.8 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 4.5 6.5 v i ges gate-emitter leakage current (v ce = 0) v ge = 20 v, t j = 150 c 100 na i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t j = 150 c 150 1 a ma g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ce = 15 v , i c = 7 a 3 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - tbd tbd tbd - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 7 a, v ge = 15 v (see figure 3) - tbd tbd tbd - nc nc nc
STGF14HF60KD, stgp14hf60kd electrical characteristics doc id 16118 rev 1 5/12 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, (see figure 2) - tbd tbd tbd - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, t j = 150 c (see figure 2) - tbd tbd tbd - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 7 a, r ge = 10 ? , v ge = 15 v (see figure 2) - tbd tbd tbd - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 7 a, r ge = 10 ? , v ge = 15 v t j = 150 c (see figure 2) - tbd tbd tbd - ns ns ns table 7. switching energy (inductive load) symbol parameter test co nditions min typ. max unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circui t. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, (see figure 2) - tbd tbd tbd - j j j eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, t j = 150 c (see figure 2) - tbd tbd tbd - j j j
electrical characteristics STGF14HF60KD, stgp14hf60kd 6/12 doc id 16118 rev 1 table 8. collector-emitter diode symbol parameter test conditions min typ. max unit v f forward on-voltage i f = 7 a i f = 7 a, t j = 150 c - 1.8 1.2 2.1 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 7 a, v r = 40 v, di/dt = 100 a/s (see figure 5) - 37 40 2.2 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 7 a, v r = 40 v, t j = 150 c, di/dt = 100 a/s (see figure 5) - 123 220 3.6 ns nc a
STGF14HF60KD, stgp14hf60kd test circuits doc id 16118 rev 1 7/12 3 test circuits figure 2. test circuit for inductive load switching figure 3. gate charge test circuit figure 4. switching waveforms figure 5. diode recovery times waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f di/dt
package mechanical data STGF14HF60KD, stgp14hf60kd 8/12 doc id 16118 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STGF14HF60KD, stgp14hf60kd package mechanical data doc id 16118 rev 1 9/12 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
package mechanical data STGF14HF60KD, stgp14hf60kd 10/12 doc id 16118 rev 1 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
STGF14HF60KD, stgp14hf60kd revision history doc id 16118 rev 1 11/12 5 revision history table 9. document revision history date revision changes 17-aug-2009 1 initial release.
STGF14HF60KD, stgp14hf60kd 12/12 doc id 16118 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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